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Si1563EDH
Vishay Siliconix
Complementary 20 V (D-S) Low-Threshold MOSFET
FEATURES
PRODUCT SUMMARY
?
TrenchFET ? Power MOSFETS: 1.8 V Rated
V DS (V)
R DS(on) ( ? )
0.280 at V GS = 4.5 V
I D (A)
1.28
?
?
ESD Protected: 2000 V
Thermally Enhanced SC-70 Package
N-Channel
20
0.360 at V GS = 2.5 V
0.450 at V GS = 1.8 V
0.490 at V GS = - 4.5 V
1.13
1
-1
?
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
P-Channel
- 20
0.750 at V GS = - 2.5 V
1.10 at V GS = - 1.8 V
- 0.81
- 0.67
APPLICATIONS
? Load Switching
? PA Switch
? Level Switch
SOT-363
SC-70 (6-LEADS)
D 1
S 2
S 1
1
6
D 1
Marking Code
1k
EA
XX
G 1
G 1
2
5
G 2
Lot Tracea b ility
and Date Code
G 2
D 2
3
4
S 2
Part # Code
3k
N -Channel
P-Channel
Top V ie w
Ordering Information: Si1563EDH-T1-E3 (Lead (P b )-free)
Si1563EDH-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N-Channel
S 1
P-Channel
D 2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
20
± 12
5s
Steady State
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
1.28
0.92
4
1.13
0.81
-1
- 0.72
-3
- 0.88
- 0.63
A
Continuous Source Current (Diode Conduction) a
I S
0.61
0.48
- 0.61
- 0.48
Maximum Power Dissipation a
T A = 25 °C
T A = 85 °C
P D
0.74
0.38
0.57
0.30
0.30
0.16
0.57
0.3
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ? 5s
Steady State
Steady State
R thJA
R thJF
130
170
80
170
220
100
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71416
S12-1258-Rev. E, 21-May-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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